Volume 36; Issue Part 2, No

Japanese Journal of Applied Physics

Volume 36; Issue Part 2, No
120

Effect of Al-doping on the Grain Growth of ZnO

Year:
1997
Language:
english
File:
PDF, 135 KB
english, 1997
125

Femtosecond Free Induction Decay Beats in Nd3+:YAG Crystal

Year:
1997
Language:
english
File:
PDF, 173 KB
english, 1997
159

Scanning Tunneling Microscopy Study of C(2×4)-NO/Pt(001)

Year:
1997
Language:
english
File:
PDF, 244 KB
english, 1997
185

Growth of Polar NaCl(111) Surface on GaAs(111) Substrates

Year:
1997
Language:
english
File:
PDF, 208 KB
english, 1997
205

P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semiconductors

Year:
1997
Language:
english
File:
PDF, 891 KB
english, 1997
211

Low Temperature Direct Silicon Wafer Bonding Using Argon Activation

Year:
1997
Language:
english
File:
PDF, 258 KB
english, 1997
251

The Free Energy of Condensed Matter under Stress

Year:
1997
Language:
english
File:
PDF, 230 KB
english, 1997
268

Homodyne Laser Interferometer

Year:
1997
Language:
english
File:
PDF, 965 KB
english, 1997
278

Control of Nematic Liquid Crystal Alignment Using Stripped Film Method

Year:
1997
Language:
english
File:
PDF, 226 KB
english, 1997
333

High-Pressure Synthesis of AlSr2Ho1- xCa xCu2O7

Year:
1997
File:
PDF, 850 KB
1997